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| MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# SI2301 Features * * * * * * * -20V,-2.8A, RDS(ON)=120m@VGS=-4.5V RDS(ON)=150m@VGS=-2.5V High dense cell design for extremely low RDS(ON) Rugged and reliable High Speed Switching SOT-23 Package Marking Code: S1 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 P-Channel Enhancement Mode Field Effect Transistor SOT-23 A D Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IDM VGS PD RJA TJ TSTG Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage Total Power Dissipation Thermal Resistance Junction to Ambientb Operating Junction Temperature Storage Temperature Rating -20 -2.8 -10 8 1.25 100 -55 to +150 -55 to +150 Unit V A A V W /W 3 1.GATE C B 2. SOURCE 3. DRAIN 1 F E 2 G K H J DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 Internal Block Diagram D DIM A B C D E F G H J K MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE G Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 inches mm S .037 .950 .037 .950 www.mccsemi.com Revision: 3 1 of 5 2008/01/15 MCC TM Micro Commercial Components SI2301 TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -0.75A VDS = -6V, ID = -2.8A, VGS = -4.5V VDD = -6V, ID = -1A, VGS = -4.5V, RGEN = 6 Test Condition VGS = 0V, ID = -250A VDS = -20V, VGS = 0V VGS = 8V, VDS = 0V VGS = -8V, VDS = 0V VGS = VDS, ID = -250A VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.0A VDS = -5V, ID = -2.8A -0.45 80 110 8 880 270 175 11 5 32 23 11 1.5 2.1 -0.75 -1.2 20 10 65 45 14.5 120 150 Min -20 -1 100 -100 Typ Max Units V A Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c d nA nA V m m S pF pF pF ns ns ns ns nC nC nC A V VDS = -6V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. www.mccsemi.com Revision: 3 2 of 5 2008/01/15 MCC TM Micro Commercial Components SI2301 10 25 C 10 -VGS=4.5,4,3,V -ID, Drain Current (A) 8 -VGS=2.5V 6 -ID, Drain Current (A) 8 6 4 -VGS=2.0V 4 2 0 0 1 2 3 -VGS=1.5V 2 TJ=125 C 0 -55 C 1.5 2.0 2.5 3.0 4 5 0.0 0.5 1.0 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1200 1000 800 600 400 200 0 0 2 4 6 8 10 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics C, Capacitance (pF) Ciss Coss Crss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=-2.8A VGS=-4.5V -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A) VGS=0V 1 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=-250A 10 10 0 10 -25 0 25 50 75 100 125 150 -1 0.2 0.4 0.6 0.8 1.0 1.2 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current www.mccsemi.com Revision: 3 3 of 5 2008/01/15 MCC TM Micro Commercial Components SI2301 10 2 -VGS, Gate to Source Voltage (V) 5 V =-6V DS ID=-2.8A 4 -ID, Drain Current (A) 10 1 RDS(ON)Limit 1ms 10ms 100ms 1s DC 3 10 0 2 10 -1 1 0 0 3 6 9 12 10 -2 TA=25 C TJ=150 C Single Pulse -1 10 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge -VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms 10 0 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 PDM t1 t2 1. R JA (t)=r (t) * R JA 2. R JA=See Datasheet 3. TJM-TA = P* R JA (t) 4. Duty Cycle, D=t1/t2 10 -2 Single Pulse -3 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve www.mccsemi.com Revision: 3 4 of 5 2008/01/15 MCC Micro Commercial Components TM ***IMPORTANT NOTICE*** Micro Commercial Components Corp . reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages. ***APPLICATIONS DISCLAIMER*** Products offer by Micro Commercial Components Corp . are not intended for use in Medical, Aerospace or Military Applications. www.mccsemi.com Revision: 3 5 of 5 2008/01/15 |
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